The n-well collector is formed by . . . . . . . . .
A. Lightly doped n-type epitaxial layer on p-Substrate
B. Heavily doped n-type epitaxial layer on p-Substrate
C. Lightly doped n-type diffused layer on p-Substrate
D. Heavily doped n-type diffused layer on p-Substrate
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> VLSI Design And Testing
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