Thermal runaway is not possible in FET because as the temperature of FET increases
A. The mobility decreases
B. The transconductance increases
C. The drain current increases
D. None of the above
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
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The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
The problem with increasing temperature causing increasing collector current is that more current increase the power dissipated by the transistor which, in turn, increases its temperature. This self-reinforcing cycle is known as thermal runaway, which may destroy the transistor.