Using the incremental low frequency small-signal model of the MOS device, the Norton equivalent resistance of the following circuit is
A. $${{\text{r}}_{{\text{ds}}}} + {\text{R}} + {{\text{g}}_{\text{m}}}{{\text{r}}_{{\text{ds}}}}{\text{R}}$$
B. $${{\text{r}}_{{\text{ds}}}} + \frac{1}{{{{\text{g}}_{\text{m}}}}} + {\text{R}}$$
C. $${{\text{r}}_{{\text{ds}}}} + {\text{R}}$$
D. $$\frac{{{{\text{r}}_{{\text{ds}}}} + {\text{R}}}}{{1 + {{\text{g}}_{\text{m}}}{{\text{r}}_{{\text{ds}}}}}}$$
Answer: Option D
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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