What is Piranha Solution?
A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate
B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning
C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon
D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning
Answer: Option D
This Question Belongs to Electronics And Communications Engineering >> VLSI Design And Testing
The dopants are introduced in the active areas of silicon by using which process?
A. Diffusion process
B. Ion Implantation process
C. Chemical Vapour Deposition
D. Either Diffusion or Ion Implantation Process
What are the advantages of E-beam masks?
A. Small feature size
B. Larger feature size
C. Looser layer
D. Complex design
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