What is Piranha Solution?

A. It is a 3 : 1 to 5 : 1 mix of nitric acid and hydrogen peroxide that is used to develop the oxide layer on silicon substrate

B. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrofluoric acid that is used to clean silicon wafers removing organic and metal contaminants or photo resist after metal patterning

C. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to grow the oxide layer on the silicon

D. It is a 3 : 1 to 5 : 1 mix of sulphuric acid and hydrogen peroxide that is used to clean wafers of organic and metal contaminants or photo resist after metal patterning

Answer: Option D