Which of the following is not associated with a p-n junction
A. Junction capacitance
B. Charge storage capacitance
C. Depletion capacitance
D. Channel length modulation
Answer: Option D
Solution (By Examveda Team)
Explanation of each option:Option A: Junction capacitance is associated with a p-n junction. This capacitance arises due to the separation of charge carriers across the junction, creating an electric field that contributes to capacitance.
Option B: Charge storage capacitance is also associated with a p-n junction. It refers to the capacitance that stores charge at the junction when it is forward biased, as the charge carriers accumulate at the junction.
Option C: Depletion capacitance is related to a p-n junction as well. It occurs due to the depletion region that forms at the junction when it is reverse biased, and this region acts like a capacitor.
Option D: Channel length modulation is not associated with a p-n junction. This phenomenon is related to field-effect transistors (FETs), where the effective length of the channel is modulated by the drain-to-source voltage, and does not occur in p-n junctions.
Conclusion: The correct answer is Option D: Channel length modulation because it is not associated with a p-n junction.
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B

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