Join The Discussion

Comments (6)

  1. Laya B
    Laya B:
    11 months ago

    Pls solve this problem

  2. Haseeb Ahmad
    Haseeb Ahmad:
    1 year ago

    assume voltage at node is Va, applying nodal analysis results in:
    ((Va-12)/68) + (Va/37) + ((Va-4)/90) = 0
    solving the above equation results us Va = 4.181 V
    therefore, IR2 = Va/R2 = 4.181/37 = 113 mA

  3. Hossam Elneshely
    Hossam Elneshely:
    1 year ago

    )A silicon sample is uniformly doped with 10^16 phosphorus atoms/cm^3 and 2×10^16 boron atoms/cm^3. If all the dopants are fully ionized, the material is _______
    p-type with carrier concentration of 10^16 /cm^3.
    p-type with carrier concentration of 4×10^16 /cm^3.
    n-type with carrier concentration of 3×10^16 /cm^3.
    Intrinsic

  4. Prakash Pavar
    Prakash Pavar:
    4 years ago

    How to solve

  5. Alfred Amoakoh
    Alfred Amoakoh:
    4 years ago

    How to solve this question

  6. ZUBAYEAR AL
    ZUBAYEAR AL:
    5 years ago

    How?

Related Questions on Branch, Loop and Node Analyses