For an intrinsic semiconductor, $$m_e^ * $$ and $$m_h^ * $$ are respectively, the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of the Fermi level

A. is a common-emitter amplifier B. uses a p-n-p transistor C. is an oscillator D. has a voltage gain less than one

A. 1 AND gate B. 2 AND gates C. 1 OR gate D. 2 OR gates

A. the gain decreases by 10 times B. the output resistance increases by 10 times C. the f_H increases by 100 times D. the input resistance decreases by 100 times

A. OR gate for a negative logic system B. NAND gate for a negative logic system C. AND gate for a positive logic system D. AND gate for a negative logic system