A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with ND = 1019/cm3. If the excess electron concentration in the steady state is ∆n = 1015/cm3 and if τp = 10µsec. (minority carrier life time) the generation rate due to irradiation

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits

Electronic Devices and Circuits

A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N_D = 10¹⁹/cm³. If the excess electron concentration in the steady state is ∆n = 10¹⁵/cm³ and if τ_p = 10µsec. (minority carrier life time) the generation rate due to irradiation

A) is 10²⁰ e-h pairs/cm³/s B) is 10²⁴ e-h pairs/cm³/s C) is 10¹⁰ e-h pairs/cm³/s D) cannot be determined, the given data is insufficient

Answer & Solution

Correct Answer: Option A

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