ExamVeda
Login
Home

Consider the following statements regarding the formation of P-N junctions 1...

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits
Electronic Devices and Circuits
?

Consider the following statements regarding the formation of P-N junctions:
1. Holes diffuse across the junction from P-side to N-side.
2. The depletion layer is wiped out.
3. There is continuous flow of current across the junction.
4. A barrier potential is set up across the junction.
Which of the above statements are correct?

Answer & Solution
Correct Answer: Option C
Let's discuss the solution. Join the discussion
Examveda
Question posted by Examveda
Community

Join the Discussion

No comments yet Be the first to discuss this question.
Keep Learning

Related Questions on Electronic Devices and Circuits

The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals B. Semiconductors C. Insulators D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons
Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly constant.
A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above
More Related Questions on Electronic Devices and Circuits