Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are

A. Metals B. Semiconductors C. Insulators D. All of the above

A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons

A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above