61.
A silicon sample A is doped with 1018atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

63.
The drift of a hole in a semiconductor is brought by-

65.
Silicon is not suitable for fabrication of light emitting diodes because it is

66.
Bulk resistance of a diode is

69.
Match List-I with List-II and select the correct answer using the options given below:
List-I (Type of Conductor) List-II (Position of Fermi Level)
a. n-type semiconductor 1. Middle of band gap
b. p-type semiconductor 2. Above conduction band
c. Intrinsic semiconductor 3. Near but below conduction band
d. Degenerate n-type semiconductor 4. Near but above valence band

70.
A good ohmic contact on P-type semiconductor chip is formed by introducing

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