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A silicon sample A is doped with 1018atoms cm3 of Boron...

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits
Electronic Devices and Circuits
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A silicon sample A is doped with 1018atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

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Correct Answer: Option B
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