Electronic Devices And Circuits MCQ Questions & Answers

Section 1 Section 2 Section 3

81.
The dynamic resistance of diode is

A. the resistance of diode when forward biased

B. the resistance of diode when reverse biased

C. the AC opposition to the current flow

D. none of these

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82.
A crystal diode is used as . . . . . . . .

A. an amplifier

B. a rectifier

C. an oscillator

D. a voltage regulator

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83.
The position of the intrinsic Fermi level of an undoped semiconductor (E_Fi) is given by:

A. $$\frac{{{{\text{E}}_{\text{C}}} - {{\text{E}}_{\text{V}}}}}{2} + \frac{{{\text{kT}}}}{2}\ln \frac{{{{\text{N}}_{\text{V}}}}}{{{{\text{N}}_{\text{C}}}}}$$

B. $$\frac{{{{\text{E}}_{\text{C}}} + {{\text{E}}_{\text{V}}}}}{2} - \frac{{{\text{kT}}}}{2}\ln \frac{{{{\text{N}}_{\text{V}}}}}{{{{\text{N}}_{\text{C}}}}}$$

C. $$\frac{{{{\text{E}}_{\text{C}}} + {{\text{E}}_{\text{V}}}}}{2} + \frac{{{\text{kT}}}}{2}\ln \frac{{{{\text{N}}_{\text{V}}}}}{{{{\text{N}}_{\text{C}}}}}$$

D. $$\frac{{{{\text{E}}_{\text{C}}} - {{\text{E}}_{\text{V}}}}}{2} - \frac{{{\text{kT}}}}{2}\ln \frac{{{{\text{N}}_{\text{V}}}}}{{{{\text{N}}_{\text{C}}}}}$$

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84.
The output V-I characteristics of an enhancement type MOSFET has

A. only an ohmic region

B. only a saturation region

C. an ohmic region at low voltage value followed by a saturation region at higher voltages

D. an ohmic region at larger voltage values preceded by a saturation region at lower voltages

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85.
When a positive d.c. voltage is applied to the n-side relative to p-side, a diode is said to be given a

A. forward bias

B. reverse bias

C. zero bias

D. neutral bias

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86.
Let β be the short circuit common emitter current gain of a BJT biased in normal active mode. Let I_C be the collector current is this β

A. a monotonically increasing function of I_C

B. a monotonically decreasing function of I_C

C. initially an increasing function of I_C which reaches a plateau, and then decreases with increasing I_C

D. Independent of I_C

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87.
Pinch-off voltage for a FET is the drain voltage at which

A. Significance drain current starts flowing

B. Drain current becomes zero

C. All free charges get removed from the channel

D. Avalanche breakdown takes place

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88.
How does the dynamic resistance of diode vary with temperature?

A. Directly proportional

B. Inversely proportional

C. Independent

D. Directly to the square of temperature

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89.
One easy way of creating biased diode clipping circuits without the need for an additional EMF supply is to use . . . . . . . .

A. Zener diodes

B. PIN diodes

C. Tunnel diodes

D. Varactor diodes

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90.
For the n-type semiconductor with n = N_D and $${\text{p}} = \frac{{{\text{n}}_{\text{i}}^2}}{{{{\text{N}}_{\text{D}}}}},$$ the hole concentration will fall below the intrinsic value because some of the holes

A. drop back to acceptor impurity states

B. drop to donor impurity states

C. virtually leave the crystal

D. recombine with the electrons

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Electronic Devices And Circuits MCQ Questions & Answers | ECE

81. The dynamic resistance of diode is

Answer & Solution

82. A crystal diode is used as . . . . . . . .

Answer & Solution

83. The position of the intrinsic Fermi level of an undoped semiconductor (EFi) is given by:

Answer & Solution

84. The output V-I characteristics of an enhancement type MOSFET has

Answer & Solution

85. When a positive d.c. voltage is applied to the n-side relative to p-side, a diode is said to be given a

Answer & Solution

86. Let β be the short circuit common emitter current gain of a BJT biased in normal active mode. Let IC be the collector current is this β

Answer & Solution

87. Pinch-off voltage for a FET is the drain voltage at which

Answer & Solution

88. How does the dynamic resistance of diode vary with temperature?

Answer & Solution

89. One easy way of creating biased diode clipping circuits without the need for an additional EMF supply is to use . . . . . . . .

Answer & Solution

90. For the n-type semiconductor with n = ND and $${\text{p}} = \frac{{{\text{n}}_{\text{i}}^2}}{{{{\text{N}}_{\text{D}}}}},$$ the hole concentration will fall below the intrinsic value because some of the holes

Answer & Solution

Read More Section(Electronic Devices and Circuits)

81.
The dynamic resistance of diode is

82.
A crystal diode is used as . . . . . . . .

83.
The position of the intrinsic Fermi level of an undoped semiconductor (E_Fi) is given by:

84.
The output V-I characteristics of an enhancement type MOSFET has

85.
When a positive d.c. voltage is applied to the n-side relative to p-side, a diode is said to be given a

86.
Let β be the short circuit common emitter current gain of a BJT biased in normal active mode. Let I_C be the collector current is this β

87.
Pinch-off voltage for a FET is the drain voltage at which

88.
How does the dynamic resistance of diode vary with temperature?

89.
One easy way of creating biased diode clipping circuits without the need for an additional EMF supply is to use . . . . . . . .

90.
For the n-type semiconductor with n = N_D and $${\text{p}} = \frac{{{\text{n}}_{\text{i}}^2}}{{{{\text{N}}_{\text{D}}}}},$$ the hole concentration will fall below the intrinsic value because some of the holes