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Identify the correct statement about MOS capacitor-
Answer & Solution
Correct Answer:
Option
D
A MOS capacitor consists of a metal gate, oxide layer, and semiconductor substrate. The behavior of the surface region depends on the type of substrate and the polarity of the applied gate voltage.
For a P-type substrate with positive gate voltage: The applied positive potential repels holes (majority carriers) away from the surface and attracts electrons (minority carriers) towards the oxide–semiconductor interface. This leads to the formation of an N-type inversion layer. Hence, Option D is correct.
Option A: Incorrect, because in an N-type substrate under negative voltage, holes move towards the surface causing accumulation, not inversion.
Option B: Incorrect, because in a P-type substrate with negative voltage, holes are attracted to the surface, again causing accumulation, not inversion.
Option C: Incorrect, because in an N-type substrate with positive voltage, electrons accumulate at the surface, leading to accumulation only, not inversion.
Therefore, the correct statement is Option D.
For a P-type substrate with positive gate voltage: The applied positive potential repels holes (majority carriers) away from the surface and attracts electrons (minority carriers) towards the oxide–semiconductor interface. This leads to the formation of an N-type inversion layer. Hence, Option D is correct.
Option A: Incorrect, because in an N-type substrate under negative voltage, holes move towards the surface causing accumulation, not inversion.
Option B: Incorrect, because in a P-type substrate with negative voltage, holes are attracted to the surface, again causing accumulation, not inversion.
Option C: Incorrect, because in an N-type substrate with positive voltage, electrons accumulate at the surface, leading to accumulation only, not inversion.
Therefore, the correct statement is Option D.
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