Which of the following is obtained by drawing a single crystal from a melt of germanium whose type is changed during the drawing process by adding first p-type and then n-type impurities?
1. Alloy junction
2. Diffused junction
3. Grown junction

A. Metals B. Semiconductors C. Insulators D. All of the above

A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons

A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above