A Silicon PN junction diode under reverse bias has depletion region width 10 µm. The relative permittivity Silicon, ε_r = 11.7 and the permittivity of free space ε₀ = 8.85 × 10^-12 F/m. The depletion capacitance of the diode per square meter is

A. Metals B. Semiconductors C. Insulators D. All of the above

A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons

A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above