11. Which one of the following is used as a passive component in electronic circuit?
12. Which element has 10 electrons?
13. The n-p-n transistor made of silicon has a DC base bias voltage 15 V and an input base resistor 150 KΩ. Then value of the base current into the transistor is
14. MOSFET uses the electric field of
15. P - N junction diode is not used for
16. When the positive voltage on the gate of a p-channel JFET is increased, its drain current
17. When doping increases, . . . . . . . . of a semiconductor decreases
18. At a given temperature a semiconductor with intrinsic carrier concentration ni = 1016/m3 is doped with a donor of dopant concentration ND = 1026/m3. Temperature remaining the same the hole concentration in the doped semiconductor is
19. In a p-type semiconductor, the conductivity due to holes (σp) is equal to (e = charge of hole, µp = hole mobility, p = hole concentration).
20. In a transistor leakage current mainly depends on
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