21. Match List-I with List-II and select the correct answer using the options given below:
List-I (Material)
List-II (Energy Level)
a. p-type semiconductor at 0K temperature the conduction
1. Donor energy level is close to the conduction band
b. Intrinsic semiconductor at 0K temperature
2. Acceptor energy level is close to the valence band
c. n-type semiconductor at room temperature
3. Fermi-level is very close to valence band
d. p-type semiconductor at room temperature
4. Fermi-level is half way between the valence band the conduction band
| List-I (Material) | List-II (Energy Level) |
| a. p-type semiconductor at 0K temperature the conduction | 1. Donor energy level is close to the conduction band |
| b. Intrinsic semiconductor at 0K temperature | 2. Acceptor energy level is close to the valence band |
| c. n-type semiconductor at room temperature | 3. Fermi-level is very close to valence band |
| d. p-type semiconductor at room temperature | 4. Fermi-level is half way between the valence band the conduction band |
22. A lateral pnp device has base width of 10 µ and diffusion coefficient for base region is 20 cm2/sec. The base transit time is . . . . . . . .
23. Which one of the following element has Forbidden energy band approximately equal to 6 eV?
24. The barrier capacitance CT
25. Match List-I with List-II and select the correct answer using the options given below:
List-I (Equation)
List-II (Relation between/Description)
a. Continuity equation
1. Relates diffusion constant with mobility
b. Einstein's equation
2. Relates charge density with electric field
c. Poisson's equation
3. Relates flow with rate of change of concentration in space
d. Diffusion equation
4. Rate of change of minority carrier density with time
| List-I (Equation) | List-II (Relation between/Description) |
| a. Continuity equation | 1. Relates diffusion constant with mobility |
| b. Einstein's equation | 2. Relates charge density with electric field |
| c. Poisson's equation | 3. Relates flow with rate of change of concentration in space |
| d. Diffusion equation | 4. Rate of change of minority carrier density with time |
26. Consider the following statements in a semiconductor crystal
1. As temperature increases lattice scattering increases.
2. Lattice Scattering is directly proportional to Doping levels.
3. As temperature increases mobility due to ionized impurity scattering increases.
4. As doping increases mobility due to ionized scattering decreases scattering events decreases.
Which of the following statements are correct?
1. As temperature increases lattice scattering increases.
2. Lattice Scattering is directly proportional to Doping levels.
3. As temperature increases mobility due to ionized impurity scattering increases.
4. As doping increases mobility due to ionized scattering decreases scattering events decreases.
Which of the following statements are correct?
27. In a bipolar transistor at room temperature if the emitter current is doubled the voltage across its base-emitter junction is
28. In a junction built - Potential depends on
29. The n-channel MOS and p-channel MOS is turned off:
30. A block of Silicon is doped with a donor atom density ND = 3 × 1014 atoms/cm3, and with an acceptor density of NA = 0.5 × 1014 atoms/cm3 find the resultant density of electrons.
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