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Electronic Devices And Circuits MCQ Questions & Answers | ECE

Learn Electronic Devices And Circuits MCQ questions & answers are available for a Electronics and Communications Engineering(ECE) students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. Electronic Devices And Circuits MCQ question is the important chapter for a Electronics and Communications Engineering(ECE) and GATE students. Page-3 section-3

Each section contains 100 MCQs on Electronic Devices and Circuits .
21
Match List-I with List-II and select the correct answer using the options given below:
List-I (Material) List-II (Energy Level)
a. p-type semiconductor at 0K temperature the conduction 1. Donor energy level is close to the conduction band
b. Intrinsic semiconductor at 0K temperature 2. Acceptor energy level is close to the valence band
c. n-type semiconductor at room temperature 3. Fermi-level is very close to valence band
d. p-type semiconductor at room temperature 4. Fermi-level is half way between the valence band the conduction band
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Answer & Solution
Answer: Option B
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22
A lateral pnp device has base width of 10 µ and diffusion coefficient for base region is 20 cm2/sec. The base transit time is . . . . . . . .
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Answer & Solution
Answer: Option C
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23
Which one of the following element has Forbidden energy band approximately equal to 6 eV?
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Answer & Solution
Answer: Option B
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24
The barrier capacitance CT
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Answer & Solution
Answer: Option C
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25
Match List-I with List-II and select the correct answer using the options given below:
List-I (Equation) List-II (Relation between/Description)
a. Continuity equation 1. Relates diffusion constant with mobility
b. Einstein's equation 2. Relates charge density with electric field
c. Poisson's equation 3. Relates flow with rate of change of concentration in space
d. Diffusion equation 4. Rate of change of minority carrier density with time
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Answer & Solution
Answer: Option B
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26
Consider the following statements in a semiconductor crystal
1. As temperature increases lattice scattering increases.
2. Lattice Scattering is directly proportional to Doping levels.
3. As temperature increases mobility due to ionized impurity scattering increases.
4. As doping increases mobility due to ionized scattering decreases scattering events decreases.
Which of the following statements are correct?
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Answer & Solution
Answer: Option D
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27
In a bipolar transistor at room temperature if the emitter current is doubled the voltage across its base-emitter junction is
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Answer & Solution
Answer: Option C
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28
In a junction built - Potential depends on
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Answer: Option C
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29
The n-channel MOS and p-channel MOS is turned off:
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Answer & Solution
Answer: Option A
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30
A block of Silicon is doped with a donor atom density ND = 3 × 1014 atoms/cm3, and with an acceptor density of NA = 0.5 × 1014 atoms/cm3 find the resultant density of electrons.
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Answer & Solution
Answer: Option C
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