81. The main purpose of the metallization process is
82. A gate to drain connected enhancement mode MOSFET is an example of
83. How much "holes carrier" emitted by the emitter recombines with the electrons in the base in a PNP type transistor?
84. If temperature increases in a diode, then VD
85. The majority carriers in an n-type semiconductor have an average drift velocity Vd in a direction perpendicular to a uniform magnetic field B. The electric field E induced due to Hall Effect acts in the direction
86. Which of the following is obtained by drawing a single crystal from a melt of germanium whose type is changed during the drawing process by adding first p-type and then n-type impurities?
1. Alloy junction
2. Diffused junction
3. Grown junction
1. Alloy junction
2. Diffused junction
3. Grown junction
87. In resistance level, the AC or the dynamic resistance of a p-n junction diode is defined by
88. Which is not a type of OLED?
89. The transit time of the current carries through the channel of a JFET decides its . . . . . . . . characteristic
90. For the emitter bias, the voltage across the emitter resistor is the same as the voltage between the emitter and the
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