ExamVeda
Login
Home
81
A bipolar junction transistor has a common base forward short circuit current gain of 0.99. Its common emitter forward short circuit current gain will be
Discuss
Answer & Solution
Answer: Option B
No explanation is given for this question. Let's Discuss on Board
82
In a MOSFET, the transfer characteristics can be used to determine which of the following device parameters:
Discuss
Answer & Solution
Answer: Option C
No explanation is given for this question. Let's Discuss on Board
83
An one-sided abrupt junction has 1021 per m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of the abrupt junction (taking q = 1.6 × 10-19C, ∈r = 16 and ∈0 = 8.875 × 10-12 F/m) is
Discuss
Answer & Solution
Answer: Option B
No explanation is given for this question. Let's Discuss on Board
84
Consider the following statements related to a CMOS (Complementary metal oxide semiconductor) inverter:
1. It combines an n-channel and a p-channel MOS transistor.
2. For binary 1 input, both transistors are OFF.
3. For binary 0 input, both transistors are ON.
4. Whatever is the state of input, one transistor is ON while the other is OFF.
Which of the statements given above are correct?
Discuss
Answer & Solution
Answer: Option B
No explanation is given for this question. Let's Discuss on Board
85
What is the approximate breakdown current that burns out the diode, if it has a breakdown voltage of 150 V and maximum power dissipation of 0.5 W
Discuss
Answer & Solution
Answer: Option B
No explanation is given for this question. Let's Discuss on Board
86
The epitaxial growth allows the wafers to be . . . . . . . . by the diffusion process.
Discuss
Answer & Solution
Answer: Option C
No explanation is given for this question. Let's Discuss on Board
87
A bar of intrinsic germanium 5 cm long is subjected to an electric potential of 12 V. If the velocity of electrons in bar is 75 m/s, then find mobility of electrons.
Discuss
Answer & Solution
Answer: Option C
No explanation is given for this question. Let's Discuss on Board
88
A CMOS amplifier when compared to an N-channel MOSFET, has the advantage of
Discuss
Answer & Solution
Answer: Option D
No explanation is given for this question. Let's Discuss on Board
89
The maximum speed of electronic switch can be . . . . . . . . operations per second
Discuss
Answer & Solution
Answer: Option D
No explanation is given for this question. Let's Discuss on Board
90
The impurity atoms is semiconductors
Discuss
Answer & Solution
Answer: Option B
No explanation is given for this question. Let's Discuss on Board