81. A bipolar junction transistor has a common base forward short circuit current gain of 0.99. Its common emitter forward short circuit current gain will be
82. In a MOSFET, the transfer characteristics can be used to determine which of the following device parameters:
83. An one-sided abrupt junction has 1021 per m3 of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of the abrupt junction (taking q = 1.6 × 10-19C, ∈r = 16 and ∈0 = 8.875 × 10-12 F/m) is
84. Consider the following statements related to a CMOS (Complementary metal oxide semiconductor) inverter:
1. It combines an n-channel and a p-channel MOS transistor.
2. For binary 1 input, both transistors are OFF.
3. For binary 0 input, both transistors are ON.
4. Whatever is the state of input, one transistor is ON while the other is OFF.
Which of the statements given above are correct?
1. It combines an n-channel and a p-channel MOS transistor.
2. For binary 1 input, both transistors are OFF.
3. For binary 0 input, both transistors are ON.
4. Whatever is the state of input, one transistor is ON while the other is OFF.
Which of the statements given above are correct?
85. What is the approximate breakdown current that burns out the diode, if it has a breakdown voltage of 150 V and maximum power dissipation of 0.5 W
86. The epitaxial growth allows the wafers to be . . . . . . . . by the diffusion process.
87. A bar of intrinsic germanium 5 cm long is subjected to an electric potential of 12 V. If the velocity of electrons in bar is 75 m/s, then find mobility of electrons.
88. A CMOS amplifier when compared to an N-channel MOSFET, has the advantage of
89. The maximum speed of electronic switch can be . . . . . . . . operations per second
90. The impurity atoms is semiconductors
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