Microwave Communication MCQ Questions & Answers

Microwave Communication MCQ Questions & Answers | ECE

Learn Microwave Communication MCQ questions & answers are available for a Electronics and Communications Engineering(ECE) students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. Microwave Communication MCQ question is the important chapter for a Electronics and Communications Engineering(ECE) and GATE students. Page-9 section-1

Performance of which one of the following diodes is not based on its negative resistance:

A) Gunn B) IMPATT C) Tunnel D) Backward

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Answer & Solution

Answer: Option D

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Magic Tee is a combination of

A) One H-plane tee and one E-plane tee B) One H-plane tee and two E-plane tee C) Two H-plane tee and one E-plane tee D) Two H-plane tee and two E-plane tee

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Answer & Solution

Answer: Option A

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A wave in which neither the electric nor the magnetic component is in the direction of propagation, is known as

A) TE B) TM C) TEM D) None of the above

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Answer & Solution

Answer: Option C

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In gunn diode, GaAs is preferred to Si because it has

A) Lower noise at higher frequencies B) High ion mobility C) Better frequency stability D) Suitable band gap

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Answer & Solution

Answer: Option D

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The degenerate modes in a waveguide are characterized by

A) Same cut-off frequencies but different field distributions B) Same cut-off frequencies and same field distributions C) Different cut-off frequencies but same field distributions D) Different cut-off frequencies and different field distributions

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Answer & Solution

Answer: Option A

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In rotary phase shifter, rotable section plate is

A) Half wavelength B) Horizontal C) One wave length D) Vertical

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Answer & Solution

Answer: Option A

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Which of the following is a "hot carrier diode"?

A) PIN diode B) LED C) Photo diode D) Schottky diode

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Answer & Solution

Answer: Option D

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A reflex klystron oscillator is a

A) high efficiency device B) high power device C) low power device D) both A and B

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Answer & Solution

Answer: Option C

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In metal semiconductor contacts, the Schottky effect is the image force induced lowering of the potential energy for charge carrier emission when an electric field is applied. This image force is:

A) $$\frac{{{q^2}}}{{16\pi {\varepsilon _0}{x^2}}}$$ B) $$\frac{{ - {q^2}}}{{16\pi {\varepsilon _0}{x^2}}}$$ C) $$\frac{{ - {q^2}}}{{4\pi {\varepsilon _0}{x^2}}}$$ D) $$\frac{{{q^2}}}{{4\pi {\varepsilon _0}{x^2}}}$$

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Answer & Solution

Answer: Option B

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The requirement for reliability, long stability, high efficiency and suitability for space environment are met by the use of

A) IF amplifier B) RF amplifier C) Travelling wave tube amplifier D) Ultrasonic amplifier

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Answer & Solution

Answer: Option C

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