Power Electronics MCQ Questions & Answers | ECE

A. 2 µs

B. 5 µs

C. 20 µs

D. 50 µs

A. 1, 2

B. 2, 3, 4

C. 1, 3, 4

D. 2, 3

A. drain characteristic of a MOSFET

B. drain characteristic of an IGBT

C. volt-ampere characteristic of a triac

D. volt-ampere characteristic of an SCR

A. High current

B. High rate of rise of current

C. High temperature rise

D. High rate of rise of voltage

A. Gate

B. Anode

C. Cathode

D. Source

A. Reduce the ripples in the output load current

B. Make discontinuous current as continuous

C. Reduce output voltage

D. Increase the load voltage

A. Cathode, anode, gate

B. Anode, cathode, grid

C. Anode, cathode, drain

D. None of the above

A. Low firing current

B. Used as a wave form generator

C. Has a stable negative resistance characteristics

D. All options are correct

A. The driver and active load are enhancement type

B. The driver is enhancement type and load depletion type

C. The driver is depletion type and load enhancement type

D. Both driver and load are depletion type

A. $$f = {R_1}\ell n\left[ {\frac{1}{{1 - n}}} \right]$$

B. $$f = {R_1}C\ell n\left[ {1 - n} \right]$$

C. $$f = \frac{1}{{{R_1}C\ell n\left[ {\frac{1}{{1 - n}}} \right]}}$$

D. $$f = \frac{1}{{{R_1}C\ell n\left[ {1 - n} \right]}}$$