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Thermal runaway in a transistor biased in the active region is...

This question belongs to Electronics And Communications Engineering Analog Electronics
Analog Electronics
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Thermal runaway in a transistor biased in the active region is due to
1. heating of the transistor.
2. change in β due to increase in temperature.
3. change in reverse collector saturation current due to rise in temperature.
4. base emitter voltage VBE which decreases with rise in temperature.
Which of the above statements is/are correct?

Answer & Solution
Correct Answer: Option C
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