Consider the following circuit using an ideal op-amp. The I-V characteristics of the diode is described by the relation $${\text{I}} = {{\text{I}}_0}\left( {{{\text{e}}^{\frac{{\text{V}}}{{{{\text{V}}_{\text{T}}}}}}} - 1} \right)$$   where V_T = 25 mV, I₀ = 1 µA and V is the voltage across the diode (taken as positive for forward bias).
For an input voltage V_i = -1 V, the output voltage V₀ is

The action of JFET in its equivalent circuit can best be represented as a

A. Current controlled Current source

B. Current controlled voltage source

C. Voltage controlled voltage source

D. Voltage controlled current source

In a CB amplifier the maximum efficiency could be

A. 99%

B. 85%

C. 50%

D. 25%

In a p⁺n junction diode under reverse bias, the magnitude of electric field is maximum at

A. The edge of the depletion region on the p-side

B. The edge of the depletion region on the n-side

C. The p⁺n junction

D. The center of the depletion region on the n-side

To prevent a DC return between source and load, it is necessary to use

A. Resistor between source and load

B. Inductor between source and load

C. Capacitor between source and load

D. Either A or B