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A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a parallel plate capacitor with SiO2 as dielectric. A surface thin film of metal (aluminum) is the top plate. The bottom plate consists of the heavily doped n* region that is formed during emitter diffusion. What is the typical value of
capacitance for an oxide thickness of 500 Å of this MOS capacitor?
Take the permittivity of dielectric (εr) as 4.
Take the permittivity of dielectric (εr) as 4.
Answer & Solution
Answer: Option
D
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