Electronic Devices And Circuits MCQ Questions & Answers

41

Number of electron-hole pairs generated per incident photon is called . . . . . . . .

A) Power efficiency B) Luminescence efficiency C) Optical efficiency D) Frequency response E) Quantum efficiency

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Answer & Solution

Answer: Option E

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42

The best electronic device for fast switching is

A) BJT B) triac C) JFET D) MOSFET

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Answer & Solution

Answer: Option D

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43

In an extrinsic semiconductor the conductivity significantly depends upon:

A) Majority charge carriers generated due to impurity doping B) Minority charge carriers generated due to thermal agitation C) Majority charge carriers generated due to thermal agitation D) Minority charge carriers generated due to impurity doping

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Answer & Solution

Answer: Option A

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44

Consider the following statements regarding the formation of P-N junctions:
1. Holes diffuse across the junction from P-side to N-side.
2. The depletion layer is wiped out.
3. There is continuous flow of current across the junction.
4. A barrier potential is set up across the junction.
Which of the above statements are correct?

A) 1 and 3 B) 2 and 3 C) 1 and 4 D) 2 and 4

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Answer & Solution

Answer: Option C

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45

The doping concentration on the p-side and n-side of a silicon diode are 1 × 10¹⁶ cm^-3, and 1 × 10¹⁷ cm^-3 respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 × 10¹⁰ cm^-3 and $$\frac{{{\text{kT}}}}{{\text{q}}}$$ = 26mV. The electron concentration at the edge of the depletion region on the p-side is

A) 2.3 × 10⁹ cm^-3 B) 1 × 10¹⁶ cm^-3 C) 1 × 10¹⁷ cm^-3 D) 2.25 × 10⁶ cm^-3

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Answer & Solution

Answer: Option A

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46

Which of the following is true?

A) A silicon wafer heavily doped with boron is a p⁺ substrate B) A silicon wafer lightly doped with boron is a p⁺ substrate C) A silicon wafer heavily doped with arsenic is a p⁺ substrate D) A silicon wafer lightly doped with arsenic is a p⁺ substrate

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Answer & Solution

Answer: Option A

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47

If the current in a diode is 10 mA at forward bias voltage of 0.1 V, static resistance is

A) 10 Ω B) 100 Ω C) 1 kΩ D) 0.01 Ω

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Answer & Solution

Answer: Option A

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48

The number of LED display indicators in logic probes are

A) 1 B) 4 C) 1 or 2 D) 2

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Answer & Solution

Answer: Option D

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49

Medium doping in Silicon and Germanium corresponds to impurity of the order of

A) 1 part in 10⁶ B) 1 part in 10⁵ C) 1 part in 10⁴ D) 1 part in 10⁸

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Answer & Solution

Answer: Option A

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50

List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II.

List-I	List-II
a. BJT	1. Population inversion
b. MOS capacitor	2. Pinch-off voltage
c. LASER diode	3. Early effect
d. JFFT	4. Flat-band voltage

A) a-2, b-1, c-4, d-2 B) a-1, b-4, c-3, d-2 C) a-3, b-4, c-1, d-2 D) a-3, b-2, c-1, d-4

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Answer & Solution

Answer: Option C

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Electronic Devices And Circuits MCQ Questions & Answers | ECE