41. Number of electron-hole pairs generated per incident photon is called . . . . . . . .
42. The best electronic device for fast switching is
43. In an extrinsic semiconductor the conductivity significantly depends upon:
44. Consider the following statements regarding the formation of P-N junctions:
1. Holes diffuse across the junction from P-side to N-side.
2. The depletion layer is wiped out.
3. There is continuous flow of current across the junction.
4. A barrier potential is set up across the junction.
Which of the above statements are correct?
1. Holes diffuse across the junction from P-side to N-side.
2. The depletion layer is wiped out.
3. There is continuous flow of current across the junction.
4. A barrier potential is set up across the junction.
Which of the above statements are correct?
45. The doping concentration on the p-side and n-side of a silicon diode are 1 × 1016 cm-3, and 1 × 1017 cm-3 respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 cm-3 and $$\frac{{{\text{kT}}}}{{\text{q}}}$$ = 26mV. The electron concentration at the edge of the depletion region on the p-side is
46. Which of the following is true?
47. If the current in a diode is 10 mA at forward bias voltage of 0.1 V, static resistance is
48. The number of LED display indicators in logic probes are
49. Medium doping in Silicon and Germanium corresponds to impurity of the order of
50. List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II.
List-I
List-II
a. BJT
1. Population inversion
b. MOS capacitor
2. Pinch-off voltage
c. LASER diode
3. Early effect
d. JFFT
4. Flat-band voltage
| List-I | List-II |
| a. BJT | 1. Population inversion |
| b. MOS capacitor | 2. Pinch-off voltage |
| c. LASER diode | 3. Early effect |
| d. JFFT | 4. Flat-band voltage |
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