71. Consider the following statements S1 and S2.
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness.
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?
S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness.
S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?
72. Consider the following statements
S1: Silicon is indirect bandgap semiconductor
S2: Germanium is direct bandgap semiconductor
S3: Gallium Arsenide is direct bandgap semiconductor
S4: Indium Phosphide is indirect bandgap semiconductor
S1: Silicon is indirect bandgap semiconductor
S2: Germanium is direct bandgap semiconductor
S3: Gallium Arsenide is direct bandgap semiconductor
S4: Indium Phosphide is indirect bandgap semiconductor
73. Which of the following statements are correct for the basic transistor amplifier configurations
74. The band gap in eV of Si at 300 K is:
75. Swept-out voltage in PIN diode happens when PIN diode is
76. What happens to a diode, if the PIV rating of the diode is exceeded?
77. The energy required to change the speed of one electron from rest to 0.6c is nearly:
78. When silicon is doped with arsenic, each arsenic atom will give the crystal . . . . . . . .
79. In the fabrication of n-p-n transistor in an IC, the buried layer on the p-type substrate is
80. Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are
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