Electronic Devices And Circuits MCQ Questions & Answers

71

Consider the following statements S₁ and S₂.
S₁: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness.
S₂: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?

A) S₁ is FALSE and S₂ is TRUE B) Both S₁ and S₂ are TRUE C) Both S₁ and S₂ are FALSE D) S₁ is TRUE and S₂ is FALSE

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Answer & Solution

Answer: Option C

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72

Consider the following statements
S1: Silicon is indirect bandgap semiconductor
S2: Germanium is direct bandgap semiconductor
S3: Gallium Arsenide is direct bandgap semiconductor
S4: Indium Phosphide is indirect bandgap semiconductor

A) S1 and S3 are correct B) S2 and S4 are correct C) S1, S2, S3 are correct D) S2 and S3 are correct E) Only S1 is correct

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Answer & Solution

Answer: Option A

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73

Which of the following statements are correct for the basic transistor amplifier configurations

A) CB amplifier has low input impedance and a low current gain B) CC amplifier has low output impedance and a low current gain C) CE amplifier has very poor voltage gain but very high input impedance D) none of the above

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Answer & Solution

Answer: Option A

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74

The band gap in eV of Si at 300 K is:

A) 0.56 eV B) 1.68 eV C) 0.66 eV D) 1.12 eV

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Answer & Solution

Answer: Option D

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75

Swept-out voltage in PIN diode happens when PIN diode is

A) Forward biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers B) Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers C) Forward biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers D) Reverse biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers

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Answer & Solution

Answer: Option B

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76

What happens to a diode, if the PIV rating of the diode is exceeded?

A) Diode behaves as zener diode B) Diode conducts poorly C) Diode get destroyed D) Diode stops conducting

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Answer & Solution

Answer: Option C

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77

The energy required to change the speed of one electron from rest to 0.6c is nearly:

A) 0.085 MeV B) 0.13 MeV C) 0.26 MeV D) 0.37 MeV

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Answer & Solution

Answer: Option B

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78

When silicon is doped with arsenic, each arsenic atom will give the crystal . . . . . . . .

A) Two holes B) Two electrons C) One electron D) One hole

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Answer & Solution

Answer: Option C

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79

In the fabrication of n-p-n transistor in an IC, the buried layer on the p-type substrate is

A) p⁺ -doped B) n⁺ -doped C) Used to reduce the parasitic capacitance D) Located in the emitter region

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Answer & Solution

Answer: Option B

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80

Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are

A) drift in forward bias, diffusion in reverse bias B) diffusion in forward bias, drift in reverse bias C) diffusion in both forward and reverse bias D) drift in both forward and reverse bias

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Answer & Solution

Answer: Option B

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Electronic Devices And Circuits MCQ Questions & Answers | ECE