VLSI Design And Testing MCQ Questions & Answers

VLSI Design And Testing MCQ Questions & Answers | ECE

Learn VLSI Design And Testing MCQ questions & answers are available for a Electronics and Communications Engineering(ECE) students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. VLSI Design And Testing MCQ question is the important chapter for a Electronics and Communications Engineering(ECE) and GATE students. Page-1 section-2

Mobility depends on

A) Transverse electric field B) Vg C) Vdd D) Channel length

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

. . . . . . . . . impurities are added to the wafer of the crystal.

A) n impurities B) p impurities C) Siicon D) Crystal

Discuss

Answer & Solution

Answer: Option B

No explanation is given for this question. Let's Discuss on Board

Which one of the following is the main factor for reducing the latch-up effect?

A) Reduced p-well resistance B) Reduced n-well resistance C) Increased n-well resistance D) Increased p-well resistance

Discuss

Answer & Solution

Answer: Option B

No explanation is given for this question. Let's Discuss on Board

The Bipolar Transistor is fabricated on . . . . . . . .

A) Same substrate of nMOS B) N-well in p Substrate C) P-well in n Substrate D) Same substrate of pMOS

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

According to body effect, substrate is biased with respect to . . . . . . . .

A) Source B) Drain C) Gate D) Vss

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

Few parts of photoresist layer is removed by using . . . . . . . .

A) Acidic solution B) Neutral solution C) Pure water D) Diluted water

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

Inversion layer in enhancement mode consists of excess of

A) Positive carriers B) Negative carriers C) Both in equal quantity D) Neutral carriers

Discuss

Answer & Solution

Answer: Option B

No explanation is given for this question. Let's Discuss on Board

P-well is created on . . . . . . . .

A) p substrate B) n substrate C) p & n substrate D) None of the mentioned

Discuss

Answer & Solution

Answer: Option B

No explanation is given for this question. Let's Discuss on Board

In N channel MOSFET which is the more negative of the elements?

A) Source B) Gate C) Drain D) Source and drain

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

The work function difference is negative for . . . . . . . .

A) Silicon substrate B) Polysilicon gate C) Silicon substrate & polysilicon gate D) None of the mentioned

Discuss

Answer & Solution

Answer: Option C

No explanation is given for this question. Let's Discuss on Board