Leakage current approximately doubles for every 10°C increase in temperature of a silicon transistor. If a silicon transistor has I_CBO = 1000 nA at 30°C, what is its leakage current at 90°C?

A. Current controlled Current source B. Current controlled voltage source C. Voltage controlled voltage source D. Voltage controlled current source

A. 99% B. 85% C. 50% D. 25%

A. The edge of the depletion region on the p-side B. The edge of the depletion region on the n-side C. The p⁺n junction D. The center of the depletion region on the n-side

A. Resistor between source and load B. Inductor between source and load C. Capacitor between source and load D. Either A or B