The collector contact region is doped with higher concentration of n-type impurities due to . . . . . . . .
A. It creates a depletion region at the contact surface
B. It creates a low conductivity path between collector region and contact
C. It reduces contact resistance
D. It can withstand high voltages as compared to collector region
Answer: Option C
This Question Belongs to Electronics And Communications Engineering >> VLSI Design And Testing
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