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51
BJT gain should be . . . . . . . . to avoid latch-up effect.
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Answer: Option B
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52
The difficulty in achieving high doping concentration leads to . . . . . . . . .
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Answer: Option B
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53
Eds is given by . . . . . . . .
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Answer: Option A
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54
Photoresist layer is formed using . . . . . . . .
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Answer: Option B
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55
How many transistors might bring up latch up effect in p-well structure?
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Answer: Option A
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56
What is the condition for non saturated region?
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Answer: Option C
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57
If βn = βp, then Vin is equal to
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Answer: Option D
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58
BiCMOS is . . . . . . . .
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Answer: Option A
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59
When the threshold voltage is more, leakage current will be?
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Answer: Option B
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60
A fast circuit requires . . . . . . . . .
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Answer: Option A
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