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Physics of Metals in Metallurgy MCQ Questions and Answers | Metallurgical Engineering

Enhance your knowledge of Physics of Metals in Metallurgy with this comprehensive collection of MCQ questions and answers. These MCQ questions and answers in Physics of Metals in Metallurgy are specifically designed for students of Metallurgical Engineering who are preparing for the GATE Exam. Strengthen your preparation and excel in your studies with this valuable resource. Page-6 section-1

51
Which of the following is true for metals?
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Answer: Option B
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52
If the drift velocity of holes under a field gradient of 150 V/m is 7.5 m/s, their mobility (in SI units) is
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Answer: Option A
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53
In a powder diffraction photograph of copper (fcc structure with a lattice parameter of 0.3608 nm) taken with a cu-ka radiation (γ = 0.154 nm), the Bragg angle for the first line is
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Answer: Option A
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54
The lowest angle reflection in a powder diffraction experiment or an fcc metal using Cu-Ka radiation (y = 1.54°A) occured at an angle of 19°30'. The lattice parameter of the metal is . . . . . . . . °A.
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Answer: Option D
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55
Match the phenomenon with their specific effects on X-ray diffraction patterns
P. Macroscopic residual stress 1. Additional diffraction lines
Q. Microscopic residual stress 2. X-ray line shift
R. Ordering reaction 3. Debye rings of non-uniform intensity
S. Preferred orientation 4. X-ray line broadening
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Answer: Option A
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56
The largest size of immobilised segment of dislocation in a Frank Read (FR) source contained in a polycrystalline material is of the order of grain size. In a metal of 10 μm grain size, the shear stress required to operate such a FR source is 100 MPa. If the grain size in the same metal is reduced to 10 μm, the shear stress required to operate such FR source would be . . . . . . . . MPa.
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Answer: Option C
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57
The outer electron configurations of CO, Fe and Ni atoms are-respectively 3d74s2, and 3d2, 3d84s2. Which of the following ions has the potential to produce the highest magnetic moments?
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Answer: Option A
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58
Silicon is doped with arsenic (concentration 1020 atoms.m-3). At room temperature, the electron and hole mobilities in Si are 0.14 m2.v-1.s-1 and 0.05 m2v-1.s-1 respectively. The conductivity in (Ωm)-1, at room temperature for Si doped with As is
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Answer: Option C
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59
In an X-Ray powder pattern of a simple cubic crystal, the 2nd peak corresponds to
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Answer: Option D
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60
At equilibrium spacing in a crystalline solid, which of the following is true for net interatomic force (F) and potential energy (U)?
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Answer: Option B
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