31. Which of following is most difficult to fabricate in IC?
32. Which one of the following statements is TRUE for an 'ideal' power diode?
33. The lower turn off time of MOSFET as compared to BJT is due to
34. N-type materials are the type of materials formed by adding group . . . . . . . . elements to the semiconductor crystals.
35. Consider avalanche breakdown in a silicon p+n junction. The n-region is uniformly doped with a donor density ND. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field Ecrit. Assume Ecrit to be independent of ND. If the built-in voltage of the p+n junction is much smaller than the breakdown voltage, VBR, the relationship between VBR and ND is given by
36. Light color and visibility is determined in LED by
37. If the reverse bias voltage increase, then what happen to diffusion capacitance.
38. Which one of the following statements is correct in respect of the use of Direct Gap (DG) and Indirect Gap (IG) semiconductors in fabrication of Light Emitting diode?
39. Match List-I with List-II and select the correct answer using the options given below:
List-I (Biasing of the junctions)
List-II (Functions)
a. E-B junction forward bias and C-B junction reverse bias
1. Very low gain amplifier
b. Both E-B and C-B junctions forward bias
2. Saturation condition
c. E-B junctions reverse bias and C-B junction forward bias
3. High gain amplifier
d. Both E-B and C-B junctions reverse bias
4. Cut-off condition
List-I (Biasing of the junctions) | List-II (Functions) |
a. E-B junction forward bias and C-B junction reverse bias | 1. Very low gain amplifier |
b. Both E-B and C-B junctions forward bias | 2. Saturation condition |
c. E-B junctions reverse bias and C-B junction forward bias | 3. High gain amplifier |
d. Both E-B and C-B junctions reverse bias | 4. Cut-off condition |
40. For material emitting 4 × 1014 Hz the band gap is . . . . . . . . eV.
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