Electronic Devices And Circuits MCQ Questions & Answers

31

Which of following is most difficult to fabricate in IC?

A) Resistor B) Transistor C) FET D) Capacitor

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Answer & Solution

Answer: Option D

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32

Which one of the following statements is TRUE for an 'ideal' power diode?

A) Forward voltage drop is zero and reverse saturation current is non-zero B) Reverse recovery time is non-zero and reverse saturation current is zero C) Forward voltage drop is zero and reverse recovery time is zero D) Forward voltage drop is non-zero and reverse recovery time is zero

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Answer & Solution

Answer: Option C

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33

The lower turn off time of MOSFET as compared to BJT is due to

A) Positive temperature coefficient B) Absence of minority carriers C) On state resistance D) Input impedance

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Answer & Solution

Answer: Option B

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34

N-type materials are the type of materials formed by adding group . . . . . . . . elements to the semiconductor crystals.

A) three B) four C) two D) five

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Answer & Solution

Answer: Option D

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35

Consider avalanche breakdown in a silicon p⁺_n junction. The n-region is uniformly doped with a donor density N_D. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field E_crit. Assume E_crit to be independent of N_D. If the built-in voltage of the p⁺_n junction is much smaller than the breakdown voltage, V_BR, the relationship between V_BR and N_D is given by

A) $${{\text{V}}_{{\text{BR}}}} \times \sqrt {{{\text{N}}_{\text{D}}}} = {\text{constant}}$$ B) $${{\text{N}}_{\text{D}}} \times \sqrt {{{\text{V}}_{{\text{BR}}}}} = {\text{constant}}$$ C) $${{\text{N}}_{\text{D}}} \times {{\text{V}}_{{\text{BR}}}} = {\text{constant}}$$ D) $$\frac{{\sqrt {{{\text{N}}_{\text{D}}}} }}{{{{\text{V}}_{{\text{BR}}}}}} = {\text{constant}}$$

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Answer & Solution

Answer: Option C

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36

Light color and visibility is determined in LED by

A) microwave B) wavelength C) spectrum D) capacitance

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Answer & Solution

Answer: Option B

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37

If the reverse bias voltage increase, then what happen to diffusion capacitance.

A) decreases B) increases C) remains constant D) increases exponentially

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Answer & Solution

Answer: Option C

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38

Which one of the following statements is correct in respect of the use of Direct Gap (DG) and Indirect Gap (IG) semiconductors in fabrication of Light Emitting diode?

A) Both DG and IG semiconductors are suitable B) Only DG semiconductor is suitable C) DG semiconductor is suitable and some IG materials having proper dopants are also used D) Only IG semiconductors are suitable

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Answer & Solution

Answer: Option B

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39

Match List-I with List-II and select the correct answer using the options given below:

List-I (Biasing of the junctions)	List-II (Functions)
a. E-B junction forward bias and C-B junction reverse bias	1. Very low gain amplifier
b. Both E-B and C-B junctions forward bias	2. Saturation condition
c. E-B junctions reverse bias and C-B junction forward bias	3. High gain amplifier
d. Both E-B and C-B junctions reverse bias	4. Cut-off condition

A) a-2, b-3, c-1, d-4 B) a-3, b-2, c-1, d-4 C) a-3, b-2, c-4, d-1 D) a-2, b-3, c-4, d-1

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Answer & Solution

Answer: Option B

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40

For material emitting 4 × 10¹⁴ Hz the band gap is . . . . . . . . eV.

A) 14.87 B) 1.33 C) 4.9 D) 1.653

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Answer & Solution

Answer: Option D

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Electronic Devices And Circuits MCQ Questions & Answers | ECE