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Electronic Devices And Circuits MCQ Questions & Answers | ECE

Learn Electronic Devices And Circuits MCQ questions & answers are available for a Electronics and Communications Engineering(ECE) students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. Electronic Devices And Circuits MCQ question is the important chapter for a Electronics and Communications Engineering(ECE) and GATE students. Page-6 section-1

Each section contains 100 MCQs on Electronic Devices and Circuits .
51
If a donor type impurity is added to the semiconductor, then at a given temperature, the Fermi Level
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Answer & Solution
Answer: Option C
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52
In PN junction diode, P side is doped with acceptor concentration of 2 × 1016 cm-3, N side is doped donor concentration of 5 × 1017 cm-3. The contact potential of diode is:
Assume thermal equivalent voltage equal to 26 mV and intrinsic carrier concentration equal to 1.45 × 1010 cm-3.
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Answer & Solution
Answer: Option A
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53
The forward amplification factor of a transistor corresponds to
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Answer & Solution
Answer: Option B
Solution:
In transistor configurations, different parameters are used to describe amplification properties.

Forward amplification factor is denoted by α (alpha) and it represents the current gain in Common Base (CB) configuration.

It is defined as the ratio of collector current to emitter current:

α = Ic / Ie

The value of α is always less than 1 but very close to it (typically between 0.95 and 0.99).

Option A: Incorrect, because power gain of CE amplifier depends on both current and voltage gain, not on forward amplification factor.

Option C: Incorrect, because CC amplifier has a voltage gain nearly equal to 1, which is not related to forward amplification factor.

Option D: Incorrect, because voltage gain of CE amplifier is different and not defined by α.

Thus, the forward amplification factor of a transistor corresponds to the current gain of CB amplifier.
54
A diode which resembles a voltage variable capacitor is known as
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Answer: Option D
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55
Find the wrong statement: specific heat of a material is
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Answer: Option C
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56
The capacitance of a reverse-biased PN junction
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Answer: Option A
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57
Thermionic emission occurs in
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Answer: Option D
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58
The stability of fixed bias circuit
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Answer: Option B
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59
Most of the majority carriers from the emitter . . . . . . . .
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Answer: Option C
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60
The Integrated Circuit used in computers is made of which element?
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Answer & Solution
Answer: Option D
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