Electronic Devices And Circuits MCQ Questions & Answers

91

One eV is equal to . . . . . . . . J.

A) 6.02 × 10²³ B) 1.6 × 10^-19 C) 6.25 × 10¹⁸ D) 1.66 × 10^-24

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Answer & Solution

Answer: Option B

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92

An n-type of silicon can be formed by adding impurity of:
1. Phosphorous
2. Arsenic
3. Boron
4. Aluminium
Which of the above are correct?

A) 1 and 2 B) 2 and 3 C) 3 and 4 D) 1 and 4

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Answer & Solution

Answer: Option A

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93

Which of the following does not show non-linear V-I characteristics?

A) Schottky diode B) Tunnel diode C) Thermistor, at a fixed temperature D) p-n Junction diode

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Answer & Solution

Answer: Option C

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94

In a p-type semiconductor, acceptor concentration is 10¹³/cm³ and intrinsic concentration is 1.5 × 10¹⁶/cm³, then find electron concentration?

A) 2.25 × 10¹⁹/cm³ B) 1.5 × 10¹⁶/cm³ C) 2.25 × 10¹⁶/cm³ D) 1.5 × 10¹⁹/cm³

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Answer & Solution

Answer: Option A

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95

When a junction diode is used in switching applications, the forward recovery time is

A) of the order of the reverse recovery time B) negligible in comparison to the reverse recovery time C) greater than the reverse recovery time D) equal to the mean carrier life time τ for the excess minority carriers

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Answer & Solution

Answer: Option B

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96

A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N_D = 10¹⁹/cm³. If the excess electron concentration in the steady state is ∆n = 10¹⁵/cm³ and if τ_p = 10µsec. (minority carrier life time) the generation rate due to irradiation

A) is 10²⁰ e-h pairs/cm³/s B) is 10²⁴ e-h pairs/cm³/s C) is 10¹⁰ e-h pairs/cm³/s D) cannot be determined, the given data is insufficient

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Answer & Solution

Answer: Option A

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97

The solar or photo voltaic cell converts:

A) Chemical energy in to electrical energy B) Solar radiation to electrical energy C) Solar radiation to thermal energy D) Thermal energy to electrical energy

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Answer & Solution

Answer: Option B

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98

Silicon has a preference in IC technology because

A) it is an indirect semiconductor B) it is a covalent semiconductor C) it is an elemental semiconductor D) of the availability of nature oxides SiO₂

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Answer & Solution

Answer: Option D

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99

For a common-base BJT configuration having I_C = 5 mA and α = 0.97, an AC signal of 5 mV is applied between the base and emitter terminals. What is the value of output impedance and current gain?

A) 0, 0.97 B) ∞, 0.97 C) ∞, -0.97 D) 0, -0.97

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Answer & Solution

Answer: Option B

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100

The unit of mobility is

A) m²V^-1s^-1 B) mV^-1s^-1 C) Vsm^-1 D) Vms^-1

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Answer & Solution

Answer: Option A

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Electronic Devices And Circuits MCQ Questions & Answers | ECE