Electronic Devices And Circuits MCQ Questions & Answers | ECE

Consider a silicon sample at T = 300 K, with a uniform donor density N_d = 5 × 10¹⁶ cm^-3 illuminated uniformly such that the optical generation rate is G_opt = 1.5 × 10²⁰ cm^-3 s^-1 throughout the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τ_p0 = 0.1 µs and τ_n0 = 0.5 µs.
The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are

Which of the following is not associated with a pn junction diode?

In an integrated circuit, the SiO₂ layer provides

The CMOS inverter can be used as an amplifier when:

GaAs has bandgap energy of 1.42 eV. The material would produce photon output at a wavelength of (Planck's constant = 6.625 × 10^-34 J - s, q = 1.6 × 10^-19 C )

A Schottky diode clamp is used along with a switching BJT for

For every 10°C temperature increase the reverse saturation current in a p-n junction diode:

Assuming the Fermi level E_F to be independent of temperature, E_F may be defined as the level with an occupancy probability of

What is the most noticeable effect of a small increase in temperature in the common emitter connected BJT?

Consider the following statements:
1. The radiation falling on a photodiode is primarily a minority carrier injector.
2. The short-circuit current of a reverse biased photodiode under illumination varies exponentially with light intensity.
3. The photo voltage emf of an open-circuited photodiode varies logarithmically with the light generated short-circuit current.
4. The spectral response of a photodiode does not depend upon the frequency of the incident light.
Which of these statements are correct?