Electronic Devices And Circuits MCQ Questions & Answers

31

At higher forward voltages, a junction diode is likely to

A) burnout B) get saturated C) suffer break down D) become noisy

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Answer & Solution

Answer: Option A

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32

Which one of the following is true with regard to photo emission?

A) Velocity of emitted electrons is dependent on light intensity B) Rate of photo emission is inversely proportional to light intensity C) Maximum velocity of electrons increases with decreasing wavelength D) Both electrons and holes are produced

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Answer & Solution

Answer: Option C

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33

The main purpose of oxidation in the IC fabrication process using silicon is:

A) diffusion B) epitaxial growth C) passivation D) packaging

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Answer & Solution

Answer: Option C

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34

When the photoresist coating (during IC fabrication) is exposed to ultraviolet light the photoresist becomes

A) oxidized B) ionized C) polymerized D) brittle

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Answer & Solution

Answer: Option C

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35

A Zener diode works on the principle of

A) tunneling of charge carriers across the junction B) thermionic emission C) diffusion of charge carriers across the junction D) hopping of charge carriers across the junction

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Answer & Solution

Answer: Option A

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36

In a bipolar transistor biased in the forward-active region, the base current is I_B = 50 µA and the collector current is I_C = 2.7 mA. The value of α is:

A) 0.949 B) 54 C) 0.982 D) 0.018 E) 2.010

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Answer & Solution

Answer: Option C

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37

For an abrupt junction varactor diode, the dependence of device capacitance (C) on applied reverse voltage (V) is given by

A) C ∝ V^1/3 B) C ∝ V^-1/3 C) C ∝ V^1/2 D) C ∝ V^-1/2

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Answer & Solution

Answer: Option D

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38

The electron and hole concentrations, n and p respectively obey the relation np = n²_i where n_i is the intrinsic carrier density. This expression is valid for which of the following?

A) For all semiconductors under any condition B) For direct band gap semiconductor only C) For non-degenerate semiconductor under thermal equilibrium condition D) For degenerate semiconductors having excess electrons and holes

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Answer & Solution

Answer: Option C

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39

In monolithic integrated circuits, the concentration of acceptor atoms in the region between isolation islands will be

A) much higher than in the p-type substrate B) much lesser than in the p-type substrate C) equal to the p-type substrate D) not equal to the p-type substrate

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Answer & Solution

Answer: Option A

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40

Which of the following statement is true for a Schottky barrier diode?

A) Minority carrier device B) Minority carrier storage time is infinite C) Diffusion capacitance is associated when the device is forward biased D) Majority carrier device

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Answer & Solution

Answer: Option D

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Electronic Devices And Circuits MCQ Questions & Answers | ECE