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81
The main purpose of the metallization process is
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Answer: Option D
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82
A gate to drain connected enhancement mode MOSFET is an example of
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Answer: Option A
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83
How much "holes carrier" emitted by the emitter recombines with the electrons in the base in a PNP type transistor?
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Answer: Option B
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84
If temperature increases in a diode, then VD
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Answer: Option C
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85
The majority carriers in an n-type semiconductor have an average drift velocity Vd in a direction perpendicular to a uniform magnetic field B. The electric field E induced due to Hall Effect acts in the direction
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Answer: Option B
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86
Which of the following is obtained by drawing a single crystal from a melt of germanium whose type is changed during the drawing process by adding first p-type and then n-type impurities?
1. Alloy junction
2. Diffused junction
3. Grown junction
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Answer: Option C
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87
In resistance level, the AC or the dynamic resistance of a p-n junction diode is defined by
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Answer: Option B
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88
Which is not a type of OLED?
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Answer: Option C
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89
The transit time of the current carries through the channel of a JFET decides its . . . . . . . . characteristic
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Answer: Option B
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90
For the emitter bias, the voltage across the emitter resistor is the same as the voltage between the emitter and the
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Answer: Option D
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