VLSI Design And Testing MCQ Questions & Answers

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Learn VLSI Design And Testing MCQ questions & answers are available for a Electronics and Communications Engineering(ECE) students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. VLSI Design And Testing MCQ question is the important chapter for a Electronics and Communications Engineering(ECE) and GATE students. Page-9 section-2

Each section contains 100 MCQs on VLSI Design and Testing .

The collector contact region is doped with higher concentration of n-type impurities due to . . . . . . . .

A) It creates a depletion region at the contact surface B) It creates a low conductivity path between collector region and contact C) It reduces contact resistance D) It can withstand high voltages as compared to collector region

Discuss

Answer & Solution

Answer: Option C

No explanation is given for this question. Let's Discuss on Board

In n channel MOSFET . . . . . . . . is constant.

A) Channel length B) Channel width C) Channel depth D) Channel concentration

Discuss

Answer & Solution

Answer: Option A

No explanation is given for this question. Let's Discuss on Board

The nMOS and pMOS transistors used in BiCMOS is . . . . . . . .

A) Depletion mode B) Enhancement mode C) Only pMOS D) Only nMOS

Discuss

Answer & Solution

Answer: Option B

No explanation is given for this question. Let's Discuss on Board

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VLSI Design And Testing MCQ Questions & Answers | ECE