Electronic Devices And Circuits MCQ Questions & Answers

51

What is one of the primary advantages of FET compared to BJT?

A) Low input impedance B) Low output impedance C) High input impedance D) High output impedance E) Low value of current

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Answer & Solution

Answer: Option C

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52

Why is silicon dioxide (SiO₂) layer used in ICs?

A) To protect the surface of the chip from external contaminants and to allow for selective formation of the n and p regions by diffusion B) because it facilitates the penetration of the desired impurity by diffusion C) To control the concentration of the diffused impurities by diffusion D) Because of its high heat conduction

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Answer & Solution

Answer: Option A

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53

In a biased JFET, the shape of the channel is as shown in the given figure. because
Electronic Devices and Circuits mcq question image

A) it is the property of the material used B) the drain end is more reverse biased than source end C) the drain end is more forward biased than source end D) the impurity profile varies with the distance from source

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Answer & Solution

Answer: Option B

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54

Practically, in order to create an electron-hole pair in a P-N junction diode, the energy of the incident photon should be

A) Less than the band gap B) Equal to the band gap C) Greater than the band gap D) None of the above

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Answer & Solution

Answer: Option C

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55

In order to generate electron-hole pairs, the maximum wavelength of radiation for Silicon (Band gap = 1.1 eV) is

A) 1.88 µm B) 1.68 µm C) 1.13 µm D) 1.54 µm

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Answer & Solution

Answer: Option C

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56

The diffusion potential across P-N junction

A) Decreases with increasing doping concentration B) Increases with decreasing band gap C) Does not depend on doping concentrations D) Increases with increase in doping concentration

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Answer & Solution

Answer: Option D

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57

The quantum efficiency η for the photo detector is
Where,
I_ph = Average photocurrent
P_e = Average incident optical power
hc/λ = Incident photon energy

A) $$\frac{{{{\text{I}}_{{\text{ph}}}}}}{{{{\text{P}}_0}}}$$ B) $$\frac{{{{\text{I}}_{{\text{ph}}}}{\text{/e}}}}{{{{\text{P}}_{\text{0}}}{\text{/(hc/}}\lambda {\text{)}}}}$$ C) $$\frac{{{{\text{P}}_{\text{0}}}}}{{{{\text{I}}_{{\text{ph}}}}}}$$ D) $$\frac{{{{\text{P}}_{\text{0}}}{\text{/(hc/}}\lambda {\text{)}}}}{{{{\text{I}}_{{\text{ph}}}}{\text{/e}}}}$$

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Answer & Solution

Answer: Option B

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58

Which statement is correct for Schottky diode?

A) Current Voltage characteristics is totally different than that of a p-n junction diode B) The current is controlled by the diffusion of minority carriers C) The current results from the flow of minority carriers D) The storage time t_s is almost zero

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Answer & Solution

Answer: Option D

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59

Assuming that the electron mobility in intrinsic silicon is 1500 cm²/V-Sec at room temperature (T = 300 K and the corresponding 'volt equivalent of temperature' V_T = 25.9 mV, what is the approximate value of the electron diffusion constant?

A) 40 cm²/s B) 4 cm²/s C) 400 cm²/s D) 4000 cm²/s

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Answer & Solution

Answer: Option A

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60

In a forward-biased p-n diode with N_A >> N_D, the product of dynamic diode resistance and diffusion capacitance C_D equals:

A) $$\tau _{\text{P}}^2$$ B) $$ - {\tau _{\text{P}}}$$ C) $$\tau _{\text{P}}^{ - 1}$$ D) $${\tau _{\text{P}}}$$

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Answer & Solution

Answer: Option D

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Electronic Devices And Circuits MCQ Questions & Answers | ECE